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HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems

机译:霍尔:用于多核系统的高能效,高适应性的最后一级STT-RAM高速缓存

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Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is particularly desirable for the last-level cache (LLC), which typically consumes a large area of silicon die. However, long write latency and high write energy still remain challenges of implementing STT-RAMs in the CPU cache. An increasingly popular method for addressing this challenge involves trading off the non-volatility for reduced write speed and write energy by relaxing the STT-RAM's data retention time. However, in order to maximize energy saving potential, the cache configurations, including STT-RAM's retention time, must be dynamically adapted to executing applications' variable memory needs. In this paper, we propose a highly adaptable last level STT-RAM cache (HALLS) that allows the LLC configurations and retention time to be adapted to applications' runtime execution requirements. We also propose low-overhead runtime tuning algorithms to dynamically determine the best (lowest energy) cache configurations and retention times for executing applications. Compared to prior work, HALLS reduced the average energy consumption by 60.57 percent in a quad-core system, while introducing marginal latency overhead.
机译:由于STT-RAM的非易失性,低泄漏功率,高密度和快速的读取速度,因此自旋传递扭矩RAM(STT-RAM)在存储器层次结构中被广泛认为是SRAM的有希望的替代品。 STT-RAM的小功能尺寸对于最后一级缓存(LLC)尤其理想,后者通常会占用大面积的硅芯片。但是,长写入延迟和高写入能量仍然是在CPU缓存中实现STT-RAM的挑战。解决这种挑战的一种日益流行的方法涉及通过降低STT-RAM的数据保留时间来权衡非易失性以降低写入速度和写入能量。但是,为了最大程度地发挥节能潜力,必须动态调整缓存配置(包括STT-RAM的保留时间),以执行应用程序的可变内存需求。在本文中,我们提出了一种高度适应性的最后一级STT-RAM缓存(HALLS),它允许LLC配置和保留时间适应应用程序的运行时执行要求。我们还提出了低开销的运行时调整算法,以动态确定最佳(最低能耗)缓存配置和执行应用程序的保留时间。与以前的工作相比,HALLS在四核系统中将平均能耗降低了60.57%,同时引入了边际延迟开销。

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