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A Continuum-based Modeling Of Mems Devices For Estimating Their Resonant Frequencies

机译:基于连续谱的记忆设备建模,用于估计其共振频率

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A continuum-based modeling of coupled electrostatics-structure interactions is presented for the frequency computations of MEMS devices. The present general formulation of electrostatics accounting for free space is validated first by specializing it to one-dimensional uniform motion of conducting surfaces and comparing the resulting electrostatics to conventional lumped models. The general coupled electrostatics-structure interactions are then applied for the prediction of resonant frequencies of MEMS devices due to bias-voltage changes and temperature variations. Comparisons of predicted resonant frequencies obtained by the present coupled electrostatics-structure interaction models with experimental results available in the literature demonstrate that the proposed continuum-based interaction modeling yields high-confidence predictions of resonant frequencies of MEMS devices.
机译:提出了一种基于连续体的静电-结构相互作用耦合模型,用于MEMS器件的频率计算。首先通过将其专用于导电表面的一维匀速运动并将所得的静电与常规集总模型进行比较,来验证考虑了自由空间的静电的一般公式。然后,将一般的耦合的静电-结构相互作用应用于由于偏置电压变化和温度变化而引起的MEMS装置谐振频率的预测。通过本发明的耦合的静电-结构相互作用模型获得的预测谐振频率与文献中提供的实验结果的比较表明,所提出的基于连续体的相互作用模型产生了MEMS器件谐振频率的高可信度预测。

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