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Enhanced thermoelectric performance of n-type Sn_xBi_2Te_(2.7)Se_(0.3) based composites embedded with in-situ formed SnBi and Te nanoinclusions

机译:增强了N型SN_XBI_2TE_(2.7)SE_(0.3)基于原位的组合材料的热电性能,其嵌入原位形成的SNBI和TE纳米限制

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摘要

Although n-type Bi2Te3-based alloys are state-of-the-art thermoelectric material, their efficiency is still too low to satisfy its wide applications. Hence, it is imperative to improve the thermoelectric performance of n-type Bi2Te2.7Se0.3 (BTS). Here, we show that through a facile method of Sn addition in BTS a new SnxBi2Te2.7Se0.3 based nanocomposite embedded with in-situ formed SnBi and Te nanoinclusions ((SnBi + Te)/SnxBi2Te2.7Se0.3) is constructed, and its thermoelectric performance is enhanced substantially as compared to pristine BTS. Specifically, addition of 0.2 wt% of Sn in BTS causes 38% increase in power factor (PF) and 40% reduction in lattice thermal conductivity. The increased PF mainly comes from elevated Seebeck coefficient due to intensified energy dependent electron scattering caused by the interface potentials; while the reduced thermal conductivity originates from enhanced phonon scattering by the embedded nanoinclusions. Consequently, both high maximum figure of merit ZT (ZT(max) = 1.11 at similar to 370 K) and large average ZT (ZT(ave) = 1.03 at T = 300 K-500 K) are achieved for this sample, which are respectively 76% and 80% higher than those of BTS studied here.
机译:尽管N型Bi2Te3的合金是最先进的热电材料,但它们的效率仍然太低,无法满足其广泛的应用。因此,必须提高n型Bi2te2.7se0.3(BTS)的热电性能。在这里,我们表明,通过BTS中的SN添加的容纳方法,基于新的SNXBI2T2.7Se0.3嵌入原位形成的SNBI和TE纳米固定剂((SNBI + TE)/snxbi2.7se0.3),和与原始BTS相比,其热电性能基本上增强。具体地,在BTS中添加0.2wt%的Sn,功率因数(PF)增加38%,晶格导热率降低40%。由于由界面电位引起的强化能量依赖性电子散射,增加的PF主要来自塞贝克系数升高;虽然降低的导热率来自嵌入的纳米过程的增强型声子散射。因此,对于该样品,实现了该样品的高最大优选ZT(Zt(MAX)= 1.11的Zt(Zt(MAX)= 1.11的相似Zt(Zt(Ave)= 1.03),这是分别比这里研究的BTS高出76%和80%。

著录项

  • 来源
    《Composites》 |2020年第15期|108151.1-108151.11|共11页
  • 作者单位

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China|Univ Sci & Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China|Univ Sci & Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China|Univ Sci & Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China|Univ Sci & Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China|Univ Sci & Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China|Univ Sci & Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thermoelectric material; Bi2Te2.7Se0.3; Sn doping; Hot pressing; Figure of merit;

    机译:热电材料;Bi2te2.7se0.3;Sn掺杂;热压;优点;

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