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首页> 外文期刊>Nano Energy >Enhanced thermoelectric properties of n-type Bi_2Te_(2.7)Se_(0.3) thin films through the introduction of Pt nanoinclusions by pulsed laser deposition
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Enhanced thermoelectric properties of n-type Bi_2Te_(2.7)Se_(0.3) thin films through the introduction of Pt nanoinclusions by pulsed laser deposition

机译:通过脉冲激光沉积引入Pt纳米夹杂物增强n型Bi_2Te_(2.7)Se_(0.3)薄膜的热电性能

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摘要

This work demonstrates the first preparation of textured n-type Bi_2Te_(2.7)Se_(0.3) thin films with content-adjustable Pt nanoinclusions by pulsed laser deposition. Characterization results reveal that metallic Pt nanoinclusions are embedded in the semiconductor matrix at grain boundaries. Addition of Pt nanoinclusions results in a higher in-plane power factor based on the simultaneous increase in electrical conductivity and absolute Seebeck coefficient. Power factor of the optimized nanocomposite thin film reaches 3.51 × 10(-3) W/mK~2 at room temperature, which is a more than 20% enhancement as compared to the single phase Bi2Te2.7Se0.3 thin film. An even greater improvement in the in-plane ZT can be expected from a reduced thermal conductivity, as indicated by cross-plane thermal property measurement. This work highlights the feasibility of combining nanocomposite engineering with textured thin films to further improve thermoelectric performance.
机译:这项工作演示了通过脉冲激光沉积法首次制备具有可调节含量的Pt纳米夹杂物的织构n型Bi_2Te_(2.7)Se_(0.3)薄膜。表征结果表明,金属Pt纳米夹杂物嵌入晶界处的半导体基体中。基于电导率和绝对塞贝克系数的同时增加,Pt纳米包含物的添加会导致更高的面内功率因数。优化后的纳米复合薄膜的功率因数在室温下达到3.51×10(-3)W / mK〜2,与单相Bi2Te2.7Se0.3薄膜相比,提高了20%以上。如跨平面热性能测量所表明的,由于降低的热导率,可以期待面内ZT的更大改善。这项工作凸显了将纳米复合材料工程技术与带纹理的薄膜相结合以进一步提高热电性能的可行性。

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