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首页> 外文期刊>Components, Packaging and Manufacturing Technology, IEEE Transactions on >Low-Temperature Dip-Based All-Copper Interconnects Formed by Pressure-Assisted Sintering of Copper Nanoparticles
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Low-Temperature Dip-Based All-Copper Interconnects Formed by Pressure-Assisted Sintering of Copper Nanoparticles

机译:铜基纳米粒子的压力辅助烧结形成的基于低温浸润的全铜互连

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摘要

Flip-chip interconnects made entirely from copper are promising candidates to overcome the intrinsic limits of solder-based interconnects and match the demand for increased current densities of high-performance microprocessors. To this end, dip-based all-
机译:完全由铜制成的倒装芯片互连有望克服基于焊料的互连的固有局限性,并满足高性能微处理器对更高电流密度的需求。为此,基于浸渍的全

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