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Thermal Optimization and Characterization of SiC-Based High Power Electronics Packages With Advanced Thermal Design

机译:具有先进散热设计的SiC基大功率电子封装的散热优化和特性分析

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摘要

A single-phase high power electronics package is designed and developed in this paper. The developed power package achieves a significant thermal performance improvement compared with the conventional wire-bonded power package. The improvement is attributed to two features of the package design. First, the SiC chips are embedded into the active metal brazed (AMB) substrates with specially designed cavities, as such the heat transfer path from the embedded SiC chips to the liquid-cooled heat sink attached to the bottom side of the AMB substrate is shortened. Hence, the thermal performance of the package is improved. Moreover, customized copper clips are introduced as the electrical interconnections between the SiC chips and the top metal layer of the substrate at the same level, and the top surface of the power package remain flat. As such another heat sink can be added to the top side of the package to further improve the thermal performance of the power package through the double-side cooling (DSC) scheme. The simulation results show that the junction-to-case thermal resistance (Theta JC) of the optimized power package is about 50% less than the Theta JC of the conventional wire-bonded power package with the same package size and the same power rate. Further applying the DSC scheme to the proposed power package, which is not suitable to the conventional wire-bonded power package, the Theta JC of the proposed power package reduces another 20%. In addition, the effects of the core layer (i.e., material and thickness) and the metal layer (i.e., materials and thicknesses) of the AMB substrate, as well as the die attach (i.e., material and thickness) on the Theta JC of the proposed power package are investigated systematically. As such the thermal performance of the power inverter package is further elaborated. Finally, the thermally enhanced power package is fabricated and assembled. Thermal characterization has been conducted, and the thermal performance of the developed power package has been evaluated. The simulation results and characterization results match well with each other.
机译:本文设计并开发了一种单相大功率电子封装。与传统的引线键合功率封装相比,开发的功率封装实现了显着的热性能改进。改进归因于包装设计的两个功能。首先,将SiC芯片嵌入具有特殊设计腔体的活性金属钎焊(AMB)基板中,这样可以缩短从嵌入式SiC芯片到附着在AMB基板底部的液冷散热器的传热路径。因此,改善了封装的热性能。此外,引入定制的铜夹作为SiC芯片与衬底的顶部金属层之间处于同一水平的电互连,并且功率封装的顶部表面保持平坦。这样,可以将另一个散热器添加到封装的顶侧,以通过双面冷却(DSC)方案进一步改善功率封装的热性能。仿真结果表明,经过优化的功率封装的结壳热阻(Theta JC)比具有相同封装尺寸和相同功率速率的传统引线键合功率封装的Theta JC小约50%。进一步将DSC方案应用于所提出的功率封装,这不适用于常规的引线键合功率封装,所提出的功率封装的Theta JC降低了20%。另外,AMB基板的核心层(即材料和厚度)和金属层(即材料和厚度)的作用,以及芯片的附着(即材料和厚度)对Theta JC的影响。对提出的电源套件进行了系统的研究。因此,进一步阐述了功率逆变器封装的热性能。最终,制造并组装了散热增强的功率封装。进行了热特性分析,并评估了开发的功率封装的热性能。仿真结果和表征结果相互匹配。

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