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A Switched Capacitor-Based SAR ADC Employing a Passive Reference Charge Sharing and Charge Accumulation Technique

机译:基于交换电容的SAR ADC采用被动参考电荷共享和电荷累积技术

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In this work, a switched capacitor-based successive approximation register (SAR) analog-to-digital converter (ADC) using a passive reference charge sharing and charge accumulation is proposed. For N-bit resolution, the fully differential version of this architecture needs only 6 capacitors, which is a significant improvement over conventional binary-weighted SAR ADC. The proposed SAR ADC is first modeled in MATLAB, and the effect of practical operational transconductance amplifier limitations such as finite values of gain, unity-gain bandwidth and slew rate on ADC characteristics is verified through behavioral simulations. To validate the proposed ADC performance, an 11-bit 2 kS/s SAR ADC is designed and laid out in UMC 180 nm 1P6M CMOS technology with a supply voltage of 1.8 V. The total design occupies an area of 568 mu mx298 mu m and consumes a power as less as 0.28 mu W. It is found that the integral nonlinearity and differential nonlinearity of this ADC are in the range + 0.35/- 0.84 least significant bit (LSB) and + 0.1/- 0.6 LSB, respectively. In addition, dynamic performance test shows that the proposed SAR ADC offers an effective number of bits of 10.14 and a Walden figure of merit (FoMW) of 0.12 pJ/conv-step.
机译:在这项工作中,提出了一种使用被动参考电荷共享和电荷累加的基于交换电容的连续近似寄存器(SAR)模数转换器(ADC)。对于N位分辨率,该架构的全差分版本仅需要6个电容器,这是对传统二进制加权SAR ADC的显着改进。所提出的SAR ADC在MATLAB中首先进行建模,并且通过行为模拟验证了实际操作跨导放大器限制的效果,例如有限的增益,单位增益带宽和ADC特征上的转换速率。为了验证所提出的ADC性能,在UMC 180nm 1P6M CMOS技术中设计和布置了11位2kS / S SAR ADC,电源电压为1.8 V.总设计占地面积568 mu mx298 mu m消耗低至0.28μWW的功率。发现该ADC的整体非线性和微分非线性分别在+ 0.35 / - 0.84最低有效位(LSB)和+ 0.1 / - 0.6LSB范围内。此外,动态性能测试表明,所提出的SAR ADC提供有效数量的10.14位和0.12 PJ / COMM步骤的沃尔登人物(FOMW)。

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