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Charge pump circuit,passive buffer that employs the charge pump circuit,and pass gate that employs the charge pump circuit

机译:电荷泵电路,采用电荷泵电路的无源缓冲器和采用电荷泵电路的通过门

摘要

Buffer (300) that includes an input node (304), an output node (308), and a three-transistor charge pump circuit (310) is coupled to the input node (304) and the output node (308). The buffer (300) generates an output signal that is a delayed version of a signal presented at the input node (304). The three-transistor charge pump (310) includes a first transistor (314) (e.g., a pass transistor) that includes a drain electrode that is coupled to the input node, a gate electrode and a source electrode; a second transistor (320) that includes a drain electrode that is coupled to a first predetermined voltage, a gate electrode coupled to the drain electrode of the second transistor, and a source electrode coupled to the gate electrode of the first transistor; and a capacitive element (330) that includes a first electrode that is coupled to the source electrode of the second transistor (320) and the gate electrode of the first transistor (314) and a second electrode that is coupled to the output node (308).
机译:包括输入节点(304),输出节点(308)和三晶体管电荷泵电路(310)的缓冲器(300)耦合到输入节点(304)和输出节点(308)。缓冲器(300)产生输出信号,该输出信号是在输入节点(304)处呈现的信号的延迟版本。三晶体管电荷泵(310)包括第一晶体管(314)(例如,通过晶体管),该第一晶体管(314)包括耦合至输入节点的漏极,栅极和源极;以及第二晶体管(320),其包括耦合至第一预定电压的漏极,耦合至第二晶体管的漏极的栅极,以及耦合至第一晶体管的栅极的源极;电容元件(330)包括:第一电极,其耦合到第二晶体管(320)的源极和第一晶体管(314)的栅极;第二电极,其耦合到输出节点(308) )。

著录项

  • 公开/公告号GB0400591D0

    专利类型

  • 公开/公告日2004-02-11

    原文格式PDF

  • 申请/专利权人 HEWLETT-PACKARD DEVELOPMENT COMPANY L.P.;

    申请/专利号GB20040000591

  • 发明设计人

    申请日2004-01-12

  • 分类号H03K19/0944;H03K19/017;

  • 国家 GB

  • 入库时间 2022-08-21 22:39:04

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