Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology

摘要

The authors present a low-power 850 nm Si optoelectronic integrated circuit (OEIC) receiver fabricated in standard 65 nm complementary metal-oxide semiconductor (CMOS) technology. They analyse power consumption of previously reported CMOS OEIC receivers and determine the authors receiver architecture for low-power operation. Their OEIC receiver consists of a CMOS-compatible avalanche photodetector and electronic circuits that include an inverter-based transimpedance amplifier, a tunable equaliser and a post amplifier. With the fabricated OEIC receiver, they successfully demonstrate 8 Gb/s operation with a bit-error rate <;10 at incident optical power of -4.5 dBm. Their OEIC receiver consumes 5 mW with 1.2 V supply voltage. To the best of their knowledge, their OEIC receiver achieves the lowest energy efficiency among 850 nm CMOS OEIC receivers.