Performance investigation of electrode work-function engineered hetero-dielectric buried oxide vertical TFET

摘要

For enhancement of IOFF in tunnel field-effect transistors (TFETs), it is important to choose novel materials and structures. Here, the authors design a hetero-dielectric buried oxide vertical TFET (HDB VTFET) and its device characteristics has been investigated. This proposed device reveals the tremendous improvement in terms of sub-threshold slope, drain-induced barrier lowering, on-current and suppresses the ambipolar behaviour up to V-gs = -1.0 V by maintaining very low off-current. Hence, the concept of hetero-dielectric buried oxide (BOX) and two metal electrodes having different work-functions are used here to obtain better results in terms of the current driving capability, steep subthreshold slope (SS) and drain-induced barrier lowering (DIBL). This device is a promising candidate for low-power consumption applications.