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An Ultrafast Adaptively Biased Capacitorless LDO With Dynamic Charging Control

机译:具有动态充电控制的超快速自适应偏置无电容LDO

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This brief presents a current-efficient fully integrated low-dropout regulator (LDO) for system-on-a-chip applications. A common-gate error amplifier with high bandwidth and slew rate is proposed to reduce the output voltage spike and the response time of the LDO greatly. In addition, the loop employs a direct dynamic charging technique to enhance load-transient responses by directly detecting voltage variations through a capacitive coupling high-pass filter. The circuit has been implemented in a 0.35-$muhbox{m}$ standard complementary metal–oxide–semiconductor process and occupies an active chip area of 0.064 $hbox{mm}^{2}$. Experimental results show that it can deliver a load current of 100 mA at a dropout voltage of 150 mV. It only consumes a quiescent current of 7 $muhbox{A}$ at light loads and can recover within 0.15 $muhbox{s}$, even under the maximum load current change. Consequently, a faster and more accurate capacitorless LDO can be achieved.
机译:本简介介绍了一种适用于片上系统应用的电流高效,全集成式低压降稳压器(LDO)。提出了一种具有高带宽和压摆率的共栅误差放大器,以大大减少LDO的输出电压尖峰和响应时间。此外,该环路采用直接动态充电技术,可通过电容耦合高通滤波器直接检测电压变化,从而增强负载瞬态响应。该电路已在0.35- $ muhbox {m} $标准互补金属-氧化物-半导体工艺中实现,并占用0.064 $ hbox {mm} ^ {2} $的有源芯片面积。实验结果表明,它可以在150 mV的压差电压下提供100 mA的负载电流。即使在最大负载电流变化下,它在轻负载下的静态电流也仅为7 $ muhbox {A} $,并且可以在0.15 $ muhbox {s} $之内恢复。因此,可以实现更快,更准确的无电容器LDO。

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