机译:基于$ V_ {T} $和$ V_ {rm TH} $相互补偿的无电阻CMOS参考电压
State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China|c|;
Complementary metal–oxide–semiconductor voltage reference without resistors; nonbandgap voltage reference; power-supply noise attenuation (PSNA) without a filtering capacitor; strong inversion region; temperature compensation;
机译:使用| V_(GS_ |和?V_(BE)的CMOS参考电压的新曲率补偿技术
机译:基于V_(gs)热补偿的微功耗CMOS电压参考电路的设计与实现
机译:CMOS带隙基准电压源的无电阻BJT偏置和曲率补偿电路(3.4nW)
机译:55 nm CMOS工艺中具有高阶温度曲率补偿的无电阻电压参考
机译:参考电压使用迁移率和阈值电压温度效应的相互补偿。
机译:具有高PSRR的纳米级低功耗无电阻电压基准
机译:55 nm CMOS工艺中具有高阶温度曲率补偿的无电阻电压参考