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250-mV Supply Subthreshold CMOS Voltage Reference Using a Low-Voltage Comparator and a Charge-Pump Circuit

机译:使用低压比较器和电荷泵电路的250mV电源亚阈值CMOS电压基准

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摘要

This brief proposes a subthreshold CMOS voltage reference circuit, which reduces the minimum supply voltage by replacing the analog amplifier in the conventional CMOS voltage reference circuit with a low-voltage comparator, a charge-pump circuit, and a digital control circuit. The subthreshold CMOS voltage reference circuit was fabricated using a 0.11- CMOS process. Its core area was 0.013 and it consumed 5.35 at and . Its minimum supply voltage was 242 mV. Ten sample chips generated 193–207-mV reference voltage with 0.4–3.2-mV/100-mV line sensitivity at – and – temperature coefficient at – .
机译:本简介提出了一种亚阈值CMOS电压基准电路,该电路通过用低压比较器,电荷泵电路和数字控制电路代替传统CMOS电压基准电路中的模拟放大器来降低最小电源电压。亚阈值CMOS电压参考电路是使用0.11- CMOS工艺制造的。其核心面积为0.013,在和时消耗5.35。其最小电源电压为242 mV。十个样品芯片在–和–的温度系数为–时产生193–207-mV参考电压,线路灵敏度为0.4–3.2-mV / 100-mV。

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