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首页> 外文期刊>IEEE Transactions on Circuits and Systems. II, Express Briefs >A 51.3-MHz 21.8-ppm/°C CMOS Relaxation Oscillator With Temperature Compensation
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A 51.3-MHz 21.8-ppm/°C CMOS Relaxation Oscillator With Temperature Compensation

机译:具有温度补偿的51.3MHz 21.8ppm /°C CMOS弛豫振荡器

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摘要

A 51.3-MHz 18-μW 21.8-ppm/°C relaxation oscillator is presented in 90-nm CMOS. The proposed oscillator employs an integrated error feedback and composite resistors to minimize its sensitivity to temperature variations. For a temperature range from -20 °C to 100 °C, the fabricated circuit demonstrates a frequency variation less than ±0.13%, leading to an average frequency drift of 21.8 ppm/°C. As the supply voltage changes from 0.8 to 1.2 V, the frequency variation is ±0.53%. The measured rms jitter and phase noise at 1-MHz offset are 89.27 ps and -83.29 dBc/Hz, respectively.
机译:在90nm CMOS中提供了一个51.3MHz,18μW21.8ppm /°C的弛豫振荡器。拟议的振荡器采用集成的误差反馈和复合电阻器,以使其对温度变化的敏感性降至最低。在-20°C至100°C的温度范围内,所制造的电路的频率变化小于±0.13%,导致平均频率漂移为21.8 ppm /°C。当电源电压从0.8变为1.2 V时,频率变化为±0.53%。在1MHz偏移处测得的均方根抖动和相位噪声分别为89.27 ps和-83.29 dBc / Hz。

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