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A Sub-200nW All-in-One Bandgap Voltage and Current Reference Without Amplifiers

机译:二00nw一体化带隙电压和电流参考,没有放大器

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This brief presents a low-power and high-precision bandgap voltage and current reference (BGVCR) in one simple circuit for battery-powered applications. All the amplifiers have been eliminated in the proposed circuit. The voltage reference is derived from the bandgap topology, and the current reference is obtained by summing a proportional-to-absolute-temperature (PTAT) current and a complementary-to-absolute-temperature (CTAT) current. Therefore, the temperature coefficient of the current reference can be optimized. Besides, a pseudo-cascode structure and a simple line sensitivity enhancement circuit are adopted to improve the current mirror accuracy and line sensitivity. The proposed circuit is fabricated in a 0.18-mu m deep N-well CMOS process with an active area of 0.063 mm2. The measured VREF and IREF are 1.2 V and 51 nA, respectively. The VREF and IREF show measured average temperature coefficients of 32.7 ppm/degrees C and 89 ppm/degrees C at a temperature of -45 to 125 degrees C and standard deviations of 0.17 % and 1.15 %, respectively. In the supply voltage range of 2 to 5 V, the line sensitivities of voltage and current are 0.058%/V and 1.76%/V, respectively. The minimum supply voltage is 2 V with a total power consumption of 192 nW at room temperature.
机译:此简介在一个简单的电路中提出了一个低功耗和高精度的带隙电压和电流参考(BGVCR),用于电池供电的应用。所有放大器都已在所提出的电路中被淘汰。电压基准源自带隙拓扑,并且通过概括比例到绝对温度(PTAT)电流和互补 - 绝对温度(CTAT)电流来获得电流参考。因此,可以优化当前参考的温度系数。此外,采用伪级联结构和简单的线路灵敏度增强电路来提高电流镜精度和线路灵敏度。该提出的电路以0.18-mu M深N-孔CMOS工艺制造,其有源面积为0.063mm 2。测量的VREF和IREF分别为1.2V和51Ana。 VREF和IREF在-45至125摄氏度的温度下显示32.7ppm /℃和89ppm /℃的测量的平均温度系数分别为0.17%和1.15%的标准偏差。在2至5 V的电源电压范围内,电压和电流的线敏感度分别为0.058%/ v和1.76%/ v。最小电源电压为2V,在室温下总功耗为192个NW。

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