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A 9.3 nW all-in-one bandgap voltage and current reference circuit using leakage-based PTAT generation and DIBL characteristic

机译:利用基于泄漏的PTAT生成和DIBL特性的9.3 nW多合一带隙电压和电流参考电路

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This paper presents a sub-10 nW bandgap reference (BGR) circuit that implements both voltage and current references in one circuit. The BGR circuit was implemented with a 0.18μm CMOS process and generates voltage and current references of 1.238 V and 6.64 nA while consuming 9.3 nW. The voltage and current references show standard deviations of 0.43 % and 1.19 % with temperature coefficients of 26 ppm/°C and 283 ppm/°C, respectively.
机译:本文提出了一种低于10​​ nW的带隙基准(BGR)电路,该电路可在一个电路中同时实现电压和电流基准。 BGR电路采用0.18μmCMOS工艺实现,并产生1.238 V和6.64 nA的电压和电流基准,而消耗9.3 nW。电压基准和电流基准显示的标准偏差分别为0.43 \%和1.19 \%,温度系数分别为26 ppm /°C和283 ppm /°C。

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