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A 1-nW Ultra-Low Voltage Subthreshold CMOS Voltage Reference With 0.0154%/V Line Sensitivity

机译:具有0.0154%/ V线路灵敏度的1nW超低电压亚阈值CMOS电压基准

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This brief presents a CMOS voltage reference for Internet-of-Things applications, which requires ultra-low power and high insensitivity to voltage variation from ambient energy harvesting. This brief proposed a novel self-regulating circuit to significantly diminish the line sensitivity (LS) of reference voltage to supply voltage without using any amplifiers or passive components. All the transistors in this design work in subthreshold region for low voltage and low power operation. The proposed design is fabricated in a standard 0.18-mu m CMOS process. The measurement results show that, the proposed circuit could provide an average reference voltage of 151 mV with a variation coefficient of 0.84 %. It achieves a LS of 0.0154 %/V when the supply voltage varies from 0.5 V to 1.8 V. The measured power supply ripple rejections at 10 Hz, 1 kHz, 100 kHz, and 1 MHz are -73.0 dB, -49.4 dB, -49.6 dB, and -49.8 dB, respectively. The average temperature coefficient is measured as 89.83 ppm/degrees C with a standard deviation of 12.19 ppm/degrees C in a temperature range from -40 degrees C to +125 degrees C. The consumed power of this design is 1 nW with a minimum supply voltage of 0.4 V at room temperature, and the active area is 0.005 mm(2).
机译:本简介介绍了用于物联网应用的CMOS电压参考,该参考电压要求超低功耗,并且对来自周围能量收集的电压变化不敏感。本简介提出了一种新颖的自调节电路,可在不使用任何放大器或无源元件的情况下,大大降低参考电压对电源电压的线灵敏度(LS)。此设计中的所有晶体管都在亚阈值范围内工作,以实现低电压和低功耗运行。拟议的设计采用标准的0.18微米CMOS工艺制造。测量结果表明,该电路可以提供151mV的平均参考电压,变化系数为0.84%。当电源电压从0.5 V变为1.8 V时,其LS达到0.0154%/ V。在10 Hz,1 kHz,100 kHz和1 MHz时测得的电源纹波抑制比为-73.0 dB,-49.4 dB,- 49.6 dB和-49.8 dB。在-40摄氏度至+125摄氏度的温度范围内,平均温度系数的测量值为89.83 ppm /摄氏度,标准偏差为12.19 ppm /摄氏度。该设计的功耗为1 nW,最小电源室温下的电压为0.4 V,有效面积为0.005 mm(2)。

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