Implications of Small Geometry Effects on$g_m/I_D$Based Design Methodology for Analog Circuits

摘要

Small geometry effects have become increasingly important in analog circuits as transistors continue to shrink. As a result, transconductance-to-drain current (${g_{m}/I_{D}}$) transistor parameters are no longer width-independent. In this brief, a procedure to develop “unit-sized” transistors with minimal sensitivity to small geometry effects is proposed. It is shown that by using the unit-sized transistors, the impact of small geometry effects on${g_{m}/I_{D}}$dependent parameters such as current density and self gain can be reduced to 3.6% and 1.5%, respectively.