Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs

摘要

The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width (L_(sp)) and silicon film thickness (t_(si)) are two independent parameters that influence the speed and static power dissipation of UTB silicon-on-insulator (SOI) MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of t_(si) and L_(sp) for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.