A new system for synthesis of high quality nonpolar GaN thin films

Guoqiang Li; Shao-Ju Shih; Zhengyi Fu

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A new system for synthesis of high quality nonpolar GaN thin films

机译：用于合成高质量非极性GaN薄膜的新系统

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摘要

High quality nonpolar m-plane GaN films were successfully grown on LiGaO_2 (100) substrates for the first time. This m-plane GaN/LiGaO_2 (100) system opens a new approach for realizing highly-efficient nitride devices.

机译：高质量非极性m平面GaN薄膜首次成功在LiGaO_2（100）衬底上生长。这种m面GaN / LiGaO_2（100）系统为实现高效氮化物器件开辟了新途径。

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来源
《Chemical Communications》 |2010年第8期|1206-1208|共3页
作者
Guoqiang Li; Shao-Ju Shih; Zhengyi Fu;
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作者单位

Department of Materials, University of Oxford, Parks Road,Oxford, UK OX1 3PH Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

Department of Materials, University of Oxford, Parks Road,Oxford, UK OX1 3PH;

Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

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入库时间 2022-08-17 13:23:34

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专利

1. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO_2(100) substrates [J] . B. Liu, R. Zhang, Z. L. Xie, Applied Physics Letters . 2007,第25期

机译：LiAlO_2（100）衬底上的非极性m平面薄膜GaN和InGaN / GaN发光二极管
2. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal-organic chemical vapor deposition [J] . Yang Weijia, Zhang Zichen, Wang Wenliang, Japanese journal of applied physics . 2018,第5期

机译：通过脉冲激光沉积和金属有机化学气相沉积相结合在r面蓝宝石衬底上生长的高质量非极性a面GaN外延膜
3. Improved Crystalline Quality Nonpolar A-gan Films Grown By Hydride Vapor Phase Epitaxy [J] . A. A. Donskov, L. I. Dyakonov, A. V. Govorkov, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第6期

机译：氢化物气相外延生长的改进晶体质量非极性A-gan膜
4. Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching [C] . J. Leach, UE. Oezguer, X. Ni, Conference on Gallium Nitride Materials and Devices; 20080121-24; San Jose,CA(US) . 2008

机译：极性和非极性GaN薄膜光电化学蚀刻过程中表面形貌的演变
5. Characterization of GaN thin films grown by RF Magnetron Sputtering for fabrication of an AlGaN/GaN HEMT biosensor [D] . Garza, Rocio Yolanda 2014

机译：射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
6. Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation [O] . Tongbo Wei, Qiang Hu, Ruifei Duan, 2009

机译：Berkovich纳米压痕法研究非极性GaN厚膜的机械变形行为
7. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates [O] . Liu B., Zhang R., Xie Z. L., 2007

机译：LiAlO2（100）衬底上的非极性m平面薄膜GaN和InGaN / GaN发光二极管
8. Synthesis and Luminescent Properties of GaN and GaN-Mn Blue Nanocrystalline Thin-Film Phosphor for FED [R] . Bondar, V. D., Felter, T. E., Hunt, C. E., 2001

机译：FED用GaN和GaN-mn蓝色纳米晶薄膜的合成及发光性能

A new system for synthesis of high quality nonpolar GaN thin films

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