With the adoption of a highly heat-resistant resin, the transfer-molded type silicon carbide (SiC) module from ROHM Co., Ltd. can be operated in a temperature as high as 225℃. The employment of an optimal module structure design resulted to a compact device measuring 32 × 48 × 3mm, one-fifteenth of the conventional Si insulated gate bi-polar transistor module with the same functions.
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