A phase separation strategy for precisely controllable writing voltage of polymer flash memory

摘要

In this work, a phase separation strategy to precise control the writing voltage of polymer memory device by morphology engineering is presented. Size-selective porous morphology of poly(methyl methacrylate) (PMMA) films are created by spin-coating a mixed polymer solution, and a nonvolatile rewritable memory behavior was observed in polymer diode with this porous film as memristive layer. By modulating the size of nanoporous structure through changing coating speed or the composition of polymer blends, the memory properties such as writing voltage and ON/OFF ratio were finely tuned, down to 0.5 V and up to three orders, respectively. The value of writing voltage here is the lowest among all the previous PMMA-based memories, making our strategy an ideal candidate for precise construction of polymer memory technology.