首页> 外文期刊>Applied Surface Science >Preferentially oriented Fe-doped CaCu_3Ti_4O_(12) films with high dielectric constant and low dielectric loss deposited on LaAlO_3 and NdGaO_3 substrates
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Preferentially oriented Fe-doped CaCu_3Ti_4O_(12) films with high dielectric constant and low dielectric loss deposited on LaAlO_3 and NdGaO_3 substrates

机译:优先取向Fe掺杂的CACU_3TI_4O_(12)膜,具有高介电常数和低介电损耗,沉积在LAALO_3和NDGAO_3基板上

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摘要

The colossal dielectric constant of calcium copper titanate (CCTO) thin films is generally accompanied by high dielectric losses which limit its potential for electronic miniaturization. Strategies for reducing the dielectric loss while keeping large dielectric constants are needed for various electrical applications of CCTO. This work aims to reduce the loss by means of doping preferentially oriented CCTO films with Fe3+ ions. Highly oriented undoped and Fe-doped calcium copper titanate (Fe-doped CCTO) thin films were fabricated by synthesizing CCTO on LaAlO3(100) and NdGaO3(100) substrates via a sol-gel spin casting method. The films with different Fe-doping concentrations (0, 1.6 and 2.6 wt%) were structurally and chemically characterized via energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. X-Ray Diffraction (XRD) patterns confirmed that our doped CCTO films had a cubic perovskite structure with well-defined preferential orientations of (h00) and (hh0) on LAO and NGO substrates, respectively. Preferentially oriented films having room temperature dielectric constants on the order of 1000 in conjunction with values of loss tangent smaller than 0.012 in the frequency range of 50 Hz-2 MHz were achieved. Temperature dependence of the dielectric constant and loss tangent revealed that Fe-doping decreased the dielectric loss via the lowering of the electrical conduction through CCTO grains.
机译:钛酸钙(CCTO)薄膜的巨粒介电常数通常伴随着高介电损耗,这限制了电子小型化的电位。在CCTO的各种电气应用中需要降低介电损耗的策略。这项工作旨在通过优先取向的CCTO薄膜与Fe3 +离子的掺杂来减少损失。通过通过溶胶 - 凝胶旋转浇铸法合成LaAlO3(100)和NdgaO3(100)衬底,制造高度取向的未掺杂和Fe掺杂的钛酸钙钛(Fe掺杂的CCTO)薄膜。通过能量分散X射线光谱和X射线光电子能谱,具有不同Fe掺杂浓度(0,1.6和2.6wt%)的膜在结构和化学表征。 X射线衍射(XRD)图案证实,我们的掺杂的CCTO薄膜具有立方钙钛矿结构,分别具有在老挝和非政府组织基材上具有明确定义的(HHO)和(HHO)的优先取向的立方钙钛矿结构。实现了在50Hz-2MHz频率范围内的损耗切线值的1000阶的室温介电常数的优先取向薄膜。介电常数和损耗切线的温度依赖性显示,Fe-掺杂通过通过CCTO晶粒的电导率降低来降低介电损耗。

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