A new growth process for crystalline ultra-thin layers of conjugated oligomers used in field-effect transistor applications

摘要

Most organic semiconductor materials dewet on silicon wafers with thermal oxide layers. While Si-wafers represent convenient substrates for building a field effect transistor (FET), dewetting largely destroys the possibility for obtaining a compact and continuous crystalline thin organic semiconductor film and thus limits the mobility in these systems. Using oligothiophenes, we present an approach where the initial dewetting process can be turned into an advantage for generating very thin but large crystalline domains of a size up to the millimetres with all molecules sharing a single orientation. Our approach can be easily extended to other molecules, which have strongly differing growth velocities in the various directions of the crystal, for example due to directional pi-stacking interactions. FETs devices based on such large crystalline domains showed charge carrier mobilities that were two orders of magnitude higher compared to non-crystallized films.