Stable resistive switching characteristics from highly ordered Cu/TiO_2/Ti nanopore array membrane memristors

摘要

This article focuses on the fabrication of highly ordered Cu/TiO2/Ti nanopore array membrane memristors by using two-step anodization and vacuum evaporation methods and exploration the effects of oxidation parameters such as anodization voltage and electrolyte temperature on device performance. The performance test results show that this novel ordered TiO2 nanopore array membrane structure can effectively regulate the distribution of the local electric field that restricts the growth path of the conductive filaments (CFs), which thereby greatly improves the stability and yield of the devices. In addition, it is found that through adjusting the process parameters, such as anodization voltage and electrolyte temperature, the lateral (pore diameter) and longitudinal (pore depth) dimensions of the TiO2 nanopores can be regulated for further optimizing device performance. These exciting results demonstrate that the highly ordered TiO2 nanopore array structure can offer a tangible effectiveness and controllability for improving the stability of memristors, suggesting the strategy seems to have an important scientific significance and application value.