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机译:Ti / TiO_2电阻材料随厚度变化的电阻随机存取记忆转换特性及模型
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Gyeonggi 467-701, Korea;
Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, P. O. Box 18, Ulsan 680-749, Korea;
机译:Ti / Hf / HfO_2 / Au电阻随机存取存储器件的电阻切换特性的Hf层厚度依赖性
机译:在用于电阻随机存取存储器的8 x 8 Pt / NiNx / Ti / TiN交叉开关阵列结构中观察到稳定的双极电阻开关特性
机译:膜厚和Ar / O2比率对基于HfOx的电阻切换随机存取存储器的电阻切换特性的影响
机译:基于NIO Unipolar开关电阻随机存取存储器(RRAM)的不规则电阻开关特性及其机制
机译:电阻切换随机存取存储器(RRAM):对实际应用的分析,建模和表征
机译:电阻性随机存取存储器(RRAM):材料交换机制性能多层单元(mlc)存储建模和应用概述
机译:2D电阻切换存储器:石墨烯及相关材料用于电阻随机存取存储器(ADV。电子。Mater。8/2017)
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。