机译:Au / TiO_2 / Ti存储器件的高度可重复的多级电阻开关特性
Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Shibpur-711103, Howrah, West Bengal, India;
Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Shibpur-711103, Howrah, West Bengal, India;
Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Shibpur-711103, Howrah, West Bengal, India;
Department of Physics, BITS, Pilani, Rajasthan, India;
Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Shibpur-711103, Howrah, West Bengal, India;
机译:Ti / Hf / HfO_2 / Au电阻随机存取存储器件的电阻切换特性的Hf层厚度依赖性
机译:Ti / TiO_2电阻材料随厚度变化的电阻随机存取记忆转换特性及模型
机译:通过实验和仿真研究形成多层基于Ti / riO_(2-x)的自由存储器件中的高多层电阻开关的起源
机译:Ti / SiN / Au存储设备中的低功耗电阻切换现象 * sup>
机译:电阻式切换存储器和可重配置设备。
机译:使用ZnO薄膜的电阻式开关存储器件的可靠性特性和导电机理
机译:al / si3N4 / p-si mIs基电阻器的电阻开关特性 切换存储设备