机译:通过实验和仿真研究形成多层基于Ti / riO_(2-x)的自由存储器件中的高多层电阻开关的起源
Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece;
Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece;
Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece;
Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece;
Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece;
机译:沉积原子层$ {rm HfTiO} _ {x} $纳米层压板的无成型电阻存储设备中的多级开关
机译:Ti / Cu_x / Pt存储设备中的多级电阻开关
机译:通过扫描和脉冲编程研究TiN / Ti / HfO_2 / W电阻开关器件的多级能力
机译:形成免费Ti / TiO_(2-X)RRAM器件的多级电阻切换的实验与仿真
机译:具有多级电阻状态的基于氧化物的电阻式随机存取存储装置的理解和应用
机译:通过更改顶部电极材料来改善三层CeO2 / Ti / CeO2电阻开关器件的耐久性和周期间一致性
机译:基于氮氧化硅的无电机双极电灌木开关存储器