Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

摘要

An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. However, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. In fact, this is a critical bottleneck that needs to be analysed in order to develop a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments used to evaluate various key parameters such as the sharpness of the transition regions, the behaviour of the implanted region and diamond lattice performance in Smart-Cut processes. Indeed, an outstanding sp(2)/sp(3) relation close to ideality (it is, that of undamaged diamond) is evidenced in the diamond-transfer region.