机译:激光诱导的大面积外延石墨烯生长,在4H-SiC上具有低薄层电阻(0001)
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Aarhus Univ Interdisciplinary Nanosci Ctr iNANO DK-8000 Aarhus Denmark;
Aarhus Univ Interdisciplinary Nanosci Ctr iNANO DK-8000 Aarhus Denmark;
Inst Phys & Chem Res 2-1 Hirosawa Wako Saitama 3510198 Japan;
Russian Acad Sci Nikolaev Inst Inorgan Chem Siberian Branch 3 Acad Lavrerntiev Pr Novosibirsk 630090 Russia;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;
Continuous laser; Large-area; Epitaxial graphene; 4H-SiC; Sheet resistance;
机译:在4H-SiC(0001)衬底上在4 mbar的压力下生长的大面积外延石墨烯的光谱和扫描探针分析
机译:Ru(0001)上大面积双层石墨烯的外延生长
机译:电子束辐照在4H-SiC(0001)衬底上Bernal双层外延石墨烯的选择性区域生长
机译:Si升华梯度在4H-SiC(0001)上进行空间梯度石墨化,以实现高质量的外延石墨烯生长
机译:2-D电子材料:6h-碳化硅上石墨烯的外延生长(0001)
机译:氢气下生长后退火在4H-SiC(0001)上外延石墨烯中的高电子迁移率
机译:外延石墨烯在4H-siC(0001)上的高电子迁移率 在氢气下进行后生长退火