首页> 外文期刊>Applied Surface Science >Structural, electronic and magnetic properties of the Ni/Cu-embedded S-vacancy defective MoS_2 monolayers and their effects on the adsorption of SO_x and O_3 molecules
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Structural, electronic and magnetic properties of the Ni/Cu-embedded S-vacancy defective MoS_2 monolayers and their effects on the adsorption of SO_x and O_3 molecules

机译:Ni / Cu嵌入式S-空位的结构,电子和磁性缺陷MOS_2单层及其对SO_X和O_3分子吸附的影响

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By using density functional theory (DFT) calculations, we predicted the structural, electronic and magnetic properties of S-vacancy defective MoS2 monolayers upon embedding Cu and Ni atoms. Firstly, we computed the binding energies for Cu and Ni embedding to the defective MoS2 structure and found that Ni embedding gives rise to the more stable structure compared to the Cu embedding. Then, we systematically inspected the adsorption of O-3, SO2 and SO3 gas molecules on their surfaces. It was found that Cu/Ni embedding significantly improves the interaction of gas molecules with MoS2 monolayers. Band structure calculations indicate that Cudoped MoS2 system exhibits metallic behavior, while Ni-MoS2 system reveals semiconductive nature. Besides, the Cu-MoS2 system shows a total magnetic moment of 1.0 mu B, which indicates the magnetic property induced by Cu embedding in the structure. Thus, Cu/Ni embedding is conductive to the adsorption of gas molecules on the MoS2 nanosheets. All the gas molecules were strongly chemisorbed on the Cu site of Cu-MoS2 systems. An increase of charge density between the interacting atoms indicate the formation of chemical bonds at the interface area.
机译:通过使用密度函数理论(DFT)计算,我们预测了S - 空位缺陷MOS2单层在嵌入Cu和Ni原子时的结构,电子和磁性。首先,我们计算了Cu和Ni嵌入到缺陷MOS2结构的粘合能量,并发现与Cu嵌入相比,Ni嵌入产生更稳定的结构。然后,我们系统地检查了在其表面上的O-3,SO2和SO3气体分子的吸附。发现Cu / Ni嵌入显着改善了气体分子与MOS2单层的相互作用。频带结构计算表明,吊架MOS2系统表现出金属行为,而NI-MOS2系统揭示了半导体性质。此外,Cu-MOS2系统显示了1.0μB的总磁矩,这表明CU嵌入结构中诱导的磁性。因此,Cu / Ni嵌入导电在MOS2纳米片上的气体分子的吸附。所有气体分子在Cu-MOS2系统的Cu位点上强烈化学吸附。相互作用原子之间的电荷密度的增加表明界面区域的化学键的形成。

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