机译:通过生长模式改性通过引入空隙来生长高质量的Aln膜在蓝宝石衬底上
Wuhan Univ Ctr Photon & Semicond Sch Power & Mech Engn Wuhan 430072 Peoples R China;
Wuhan Univ Ctr Photon & Semicond Sch Power & Mech Engn Wuhan 430072 Peoples R China;
Wuhan Univ Inst Technol Sci Wuhan 430072 Peoples R China;
Wuhan Univ Ctr Photon & Semicond Sch Power & Mech Engn Wuhan 430072 Peoples R China;
Wuhan Univ Ctr Photon & Semicond Sch Power & Mech Engn Wuhan 430072 Peoples R China;
Wuhan Univ Ctr Photon & Semicond Sch Power & Mech Engn Wuhan 430072 Peoples R China;
Wuhan Univ Inst Technol Sci Wuhan 430072 Peoples R China;
Wuhan Univ Ctr Photon & Semicond Sch Power & Mech Engn Wuhan 430072 Peoples R China|Wuhan Univ Inst Technol Sci Wuhan 430072 Peoples R China|Chinese Acad Sci State Key Lab Appl Opt Changchun Inst Opt Fine Mech & Phys Changchun 130033 Peoples R China;
AlN; Void; Dislocation; Stress relaxation;
机译:通过生长模式改性,在溅射的Aln /蓝宝石上生长的高质量Aln薄膜
机译:通过生长模式改性,在溅射的Aln /蓝宝石上生长的高质量Aln薄膜
机译:ALN梯度夹层设计,用于溅射ALN /蓝宝石衬底上高质量ALN外延膜的生长
机译:由RF-MBE生长的蓝宝石(0001)基板上的超平板和优质ALN薄膜
机译:在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
机译:蓝宝石衬底上具有纳米尺度厚AlN成核层的高质量无裂纹AlN薄膜的异质外延生长用于基于AlGaN的深紫外发光二极管
机译:具有纳米级厚的Aln成核层对基于Algan的深紫外发光二极管的纳米级厚的Aln成核膜的高质量和无裂缝Aln膜的异质生长
机译:模拟氮化铝(alN)衬底上生长的氮化铝镓((al)GaN)薄膜的生长