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Electrochemical reduction of graphene oxide on biomedical grade CoCr alloy

机译:生物医学级CoCr合金上氧化石墨烯的电化学还原

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In the present work, the characterization of Electrochemically Reduced Graphene Oxide (ErGO) films on a biomedical grade CoCr alloy has been performed. The direct electrodeposition process was carried out by means of two electrochemical techniques: chronoamperometry and cyclic voltammetry experiments, both taking into account the influence of oxygen in the solution. Characterization of the resulting ErGO films on CoCr alloys was carried out by SEM, AFM, Raman spectroscopy and XPS. Both electrochemical reduction procedures led to the deposition of graphene-based films on the CoCr surfaces after the partial removal of the oxygenated functional groups present in the graphene network of the starting material. The deconvolution of the XPS high-resolution C1s and O1s spectra mainly showed Csp(2) bonding and the presence of C=O and C-O residual groups covering the CoCr surface. Moreover, the ErGO films that were stacked on the CoCr surfaces exhibited non-uniform thickness reaching values corresponding to the presence of 80 layers of the graphene material. In addition, Raman spectroscopy revealed a certain structural disorder in the ErGO films deposited by means of the different electrochemical techniques investigated. This fact was more evident on the film from the chronoamperometric experiments, as the fastest electrochemical reduction rate provided by the application of a high reduction potential (-2.1 V-vs. (Ag/AgCl)) could induce the development of defects in the resulting film, so the peaks corresponding to the CoCr substrate could be observed.
机译:在目前的工作中,已经对生物医学级CoCr合金上的电化学还原氧化石墨烯(ErGO)膜进行了表征。直接电沉积过程是通过两种电化学技术进行的:计时电流法和循环伏安法实验,都考虑了溶液中氧气的影响。通过SEM,AFM,拉曼光谱和XPS对CoCr合金上的ErGO薄膜进行了表征。在部分除去起始材料的石墨烯网络中存在的氧化官能团之后,两种电化学还原方法均导致石墨烯基薄膜沉积在CoCr表面上。 XPS高分辨率C1s和O1s光谱的反卷积主要显示Csp(2)键和覆盖CoCr表面的C = O和C-O残留基团的存在。而且,堆叠在CoCr表面上的ErGO膜表现出不均匀的厚度,达到对应于80层石墨烯材料的存在的值。另外,拉曼光谱法揭示了通过研究的不同电化学技术沉积的ErGO膜中的某种结构紊乱。通过计时电流实验,该事实在薄膜上更为明显,因为通过施加高还原电位(-2.1 V-vs。(Ag / AgCl))提供的最快的电化学还原速率可能导致最终产物中缺陷的发展。膜,因此可以观察到对应于CoCr衬底的峰。

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