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Substrate effect on the evolution of surface morphology of BaF_2thin films: A study based on fractal concepts

机译:基质对BaF_2薄膜表面形貌演化的影响:基于分形概念的研究

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Fractal concepts are used to explore how different substrates affect the morphology of deposited barium fluoride (BaF2) thin films. BaF(2 )thin films of thickness 20 nm are prepared by electron beam evaporation technique at room temperature on glass, silicon and aluminum substrates. The structural properties and surface morphologies are investigated using glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM), respecfively. Crystallite size, calculated from the XRD peaks, using the Debye Scherrer's formula, is found to be significantly less for the case of Si substrate than for Al and glass substrates. Higuchi's algorithm is applied to extract the fractal dimension of the horizontal and vertical sections of AFM images of the films. From the fractal dimension, the values of Hurst exponent (H) are inferred. For Al and glass substrates we find that H 0.5, which shows that the height fluctuations at neighboring pixels are positively correlated. However, for Si substrate, it is found that H 0.5 indicating that the height fluctuations at neighboring pixels are negatively correlated.
机译:分形概念用于探索不同的基材如何影响沉积的氟化钡(BaF2)薄膜的形态。通过电子束蒸发技术在室温下在玻璃,硅和铝基板上制备厚度为20 nm的BaF(2)薄膜。分别使用掠射角X射线衍射(GAXRD)和原子力显微镜(AFM)研究了结构特性和表面形态。使用Debye Scherrer公式根据XRD峰计算得出的微晶尺寸明显小于Si和Al和玻璃衬底。应用Higuchi算法提取胶片AFM图像的水平和垂直部分的分形维数。从分形维数推断出赫斯特指数(H)的值。对于铝和玻璃基板,我们发现H> 0.5,这表明相邻像素的高度波动呈正相关。然而,对于Si衬底,发现H <0.5表明相邻像素处的高度波动负相关。

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