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机译:等离子掺杂的高质量GaN缓冲层及其在365 nm InGaN / AlGaN紫外发光二极管中的应用
Wuhan Univ, Key Lab Hydraul Machinery Transients, Minist Educ, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Res Ctr Elect Mfg & Packaging Integrat, Inst Technol Sci, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Key Lab Hydraul Machinery Transients, Minist Educ, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Key Lab Hydraul Machinery Transients, Minist Educ, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Key Lab Hydraul Machinery Transients, Minist Educ, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Res Ctr Elect Mfg & Packaging Integrat, Inst Technol Sci, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Key Lab Hydraul Machinery Transients, Minist Educ, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Res Ctr Elect Mfg & Packaging Integrat, Inst Technol Sci, Wuhan 430072, Hubei, Peoples R China;
GaN; UV LEDs; Isoelectronic doping; TEM; Threading dislocation; SIMS;
机译:通过控制GaN缓冲层的形态来提高InGaN / GaN近紫外发光二极管的亮度和可靠性
机译:含Si重掺杂GaN过渡层的375 nm紫外InGaN / AIGaN发光二极管的生长模式,内部量子效率和器件性能的研究
机译:p-GaN中两步掺Mg对不具有AlGaN电子阻挡层的InGaN蓝色发光二极管的效率特性的影响
机译:通过使用重掺杂Si的GaN生长模式过渡层实现高性能375 nm紫外InGaN / AlGaN发光二极管
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:227-261NM基于Algan的深度紫外发光二极管,在蓝宝石的高质量Aln缓冲区上制造
机译:铍掺杂GaN缓冲层对外延alGaN / GaN异质结构电子性质的邻近效应