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La-doped p-type ZnO nanowire with enhanced piezoelectric performance for flexible nanogenerators

机译:La掺杂的p型ZnO纳米线具有增强的压电性能,用于柔性纳米发电机

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摘要

In recent years, energy harvesting has attracted considerable attention as a promising method to convert waste energy to useful energy. In particular, piezoelectric energy harvesters are of significant interest, because they have a simple structure and can be used to harvest energy regardless of weather or other environmental conditions. In accordance with the miniaturization trend of electronic devices driven by low power, piezoelectric nanogenerators (PENGs) using various nanostructured materials are being developed. Among them, ZnO nanowires (NWs) are most widely used for the use of PENGs. However, while research on n-type ZnO NWs is extensive, studies on p-type ZnO NWs are insufficient owing to their poor stability. In this study, La-doped p-type ZnO (La: ZnO) NWs were synthesized by a hydrothermal method to expand the applications of p-type ZnO and determine their potential as PENGs. XRD analysis showed that La3+ ions was well doped without the formation of any secondary phases and caused a change in the lattice parameter when compared to that of undoped ZnO. XPS analysis was performed to investigate the surface elemental compositions of La: ZnO NWs, and the morphology of La: ZnO NWs was investigated using SEM and TEM. We further studied the piezoelectric output performance of undoped and La-doped ZnO NWs, and found that La: ZnO NWs showed improved piezoelectric output performance as a result of electron screening effect of the p-type semiconductor.
机译:近年来,能量收集作为将废物能源转化为有用能源的一种有前途的方法已引起了广泛关注。尤其是,压电能量收集器具有很大的吸引力,因为它们具有简单的结构,可以不受天气或其他环境条件的影响而收集能量。根据由低功率驱动的电子设备的小型化趋势,正在开发使用各种纳米结构材料的压电纳米发电机(PENG)。其中,ZnO纳米线(NWs)最广泛用于PENG的使用。然而,尽管对n型ZnO NW的研究广泛,但是由于p型ZnO NW的稳定性差,因此对它们的研究不足。在本研究中,通过水热法合成了掺La的p型ZnO(La:ZnO)NW,以扩展p型ZnO的应用并确定其作为PENG的潜力。 XRD分析表明,与未掺杂的ZnO相比,La3 +离子掺杂良好,没有形成任何次级相,并且导致晶格参数发生变化。进行XPS分析以研究La:ZnO NWs的表面元素组成,并使用SEM和TEM研究La:ZnO NWs的形态。我们进一步研究了未掺杂和掺La的ZnO NW的压电输出性能,发现La:ZnO NW由于p型半导体的电子屏蔽效应而显示出改善的压电输出性能。

著录项

  • 来源
    《Applied Surface Science》 |2019年第1期|969-973|共5页
  • 作者单位

    Inst Adv Engn, Mat Sci & Chem Engn Ctr, 175-28 Goan Ro,51 Beon Gil, Yongin 17180, Gyeonggi Do, South Korea|Korea Univ, Dept Mat Sci & Engn, Seoul, South Korea;

    Inst Adv Engn, Mat Sci & Chem Engn Ctr, 175-28 Goan Ro,51 Beon Gil, Yongin 17180, Gyeonggi Do, South Korea;

    Hanyang Univ, Dept Mat Sci & Chem Engn, Seoul, South Korea;

    Inst Adv Engn, Mat Sci & Chem Engn Ctr, 175-28 Goan Ro,51 Beon Gil, Yongin 17180, Gyeonggi Do, South Korea;

    Korea Univ, Dept Mat Sci & Engn, Seoul, South Korea;

    Inst Adv Engn, Mat Sci & Chem Engn Ctr, 175-28 Goan Ro,51 Beon Gil, Yongin 17180, Gyeonggi Do, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO nanowires; La-doping; p-type ZnO; Flexible device; Nanogenerators;

    机译:ZnO纳米线;La掺杂;p型ZnO;柔性器件;纳米管;

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