机译:基于Si_3N_4层封装的石墨烯场效应晶体管的光电探测器的长期稳定性
Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 100044, Peoples R China;
Chinese Acad Sci, Inst Microelect, IMECAS, IC Adv Proc R&D Ctr,Key Lab Microelect Devices &, Beijing 100029, Peoples R China;
Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 100044, Peoples R China;
Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 100044, Peoples R China;
Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 100044, Peoples R China;
Graphene; FET; Photodetector; Si3N4; Long-term stability;
机译:基于具有场效应晶体管结构的双层石墨烯纳米带的太赫兹/红外光电探测器的光学特性
机译:h-BN封装石墨烯场效应晶体管的射频性能预测和稳定性权衡
机译:超薄Al_2O_3 / Si_3N_4双层AlGaN / GaN绝缘栅异质结构场效应晶体管中栅电流泄漏优异抑制效果的机理
机译:基于3D微管石墨烯场效应晶体管的偏振敏感光电探测器
机译:基于层状材料及其异质结构的场效应晶体管中的电荷传输。
机译:基于有机半导体和CsPbI3钙钛矿纳米棒双层结构的混合场效应晶体管和光电探测器
机译:场效应晶体管:单层六边形氮化硼膜,具有大畴尺寸和清洁界面,用于增强基于石墨烯的场效应晶体管的迁移率(ADV。Mater。10/2014)