Growth of Zn_(1-x)Mn_xTe films on GaAs(1 0 0) by hot-wall epitaxy

摘要

We have studied the growth of the Zn_(1-x)Mn_x/Te film on the GaAs(1 0 0) substrate by use of hot-wall epitaxy (HWE) system. The growth rate is rather slow and the epitaxial Zn_(1-x)Mn_xTe films with thickness of about 230 nm are obtained after 6h deposition. Mn composition can be easily controlled in the range of x = 0―0.33 by changing the Mn source temperature (650-680℃). It, however, is found that the structural quality of the films degrades with increasing Mn composition. Obtained Zn_(1-x)Mn_xTe films showed photoluminescence originating in Mn~(2+) ions.