Growth of InBixSb(1-x) films on GaAs(0 0 1) substrates using liquid phase epitaxy and their characterization

摘要

The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at I put resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9.2 x 10(16)/cm(3) and the Hall mobility is 3.54 x 10(4) cm(2)/V s at 300 K. The room temperature hand gap has been found to be in the range of 0.134-0.140eV. These results indicate that the grown films are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties.