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Study of chemical dissolution of the barrier oxide layer of porous alumina films formed in oxalic acid using a re-anodizing technique

机译:用再阳极氧化技术研究草酸中形成的多孔氧化铝膜的阻挡氧化物层的化学溶解

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Chemical dissolution of the barrier layer of alumina films formed on 98% aluminium in the 4% oxalic acid after immersion in 2 mol dm(-3) sulphuric acid at 50 degreesC have been studied. The barrier layer thickness before and after dissolution was determined using a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. Such defects as micropores, which reach the aluminium basis in the barrier oxide layer, were detected after the beginning of dissolution. It was established that the barrier layer material might consist of two or three regions according to the dissolution rate. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with low dissolution rate. The barrier oxide contains three layers at 60 V and above it: the outer layer with high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with low dissolution rate. A higher anodizing voltage leads to a higher dissolution rate of the outer and middle layers. We suggest that the change in the amount of layers in the barrier oxide is linked with the change in the growth mechanism of porous alumina in oxalic acid above 55 V (C) 2004 Elsevier B.V. All rights reserved.
机译:研究了在50%的2%dm(-3)硫酸中浸泡后,在4%的草酸中98%的铝上形成的氧化铝膜的阻挡层的化学溶解情况。使用再阳极氧化技术确定溶解前后的势垒层厚度。使用带有计算机系统的数字电压表来记录阳极电位随重新阳极化时间的变化。在溶解开始后,就检测出了诸如微孔之类的缺陷,这些缺陷到达了隔离氧化物层中的铝基。已经确定,根据溶解速率,阻挡层材料可以由两个或三个区域组成。隔离氧化物在50 V电压下包含两层:溶解速率最高的外层和溶解速率低的内层。隔离氧化物在60 V或以上时包含三层:具有高溶解速率的外层,具有最高溶解速率的中间层和具有低溶解速率的内层。较高的阳极氧化电压导致外层和中间层的较高溶解速率。我们建议在55 V(C)2004 Elsevier B.V.以上的权利中,阻隔氧化物中层数的变化与草酸中多孔氧化铝的生长机理的变化有关。

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