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首页> 外文期刊>Applied Surface Science >Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering
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Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering

机译:反应氮气浓度对射频制备TiN薄膜性能的影响。磁控溅射

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Structural and mechanical properties of the TiN films deposited on stainless-steel substrates by rf. magnetron sputtering have been studied. The TiN films of few hundreds of nanometers in thickness were fabricated, varying both the total pressure of the N-2/Ar reactive gas mixture and N-2 partial pressure in a chamber. It was found that the morphology of the TiN films strongly depended on the N-2 concentration of the working gas. A formation of the (2 0 0) phase was detected at 50% of N-2 concentration. The tribological properties of the deposited films strongly depended on the total pressure. A low frictional coefficient of 0.14 has been measured for TiN films deposited at 50% of N-2, at a total pressure 9 Pa. (c) 2004 Published by Elsevier B.V.
机译:射频沉积在不锈钢基底上的TiN膜的结构和力学性能。已经研究了磁控溅射。制作了几百纳米厚的TiN膜,同时改变了N-2 / Ar反应气体混合物的总压力和腔室内N-2的分压。已经发现,TiN膜的形态在很大程度上取决于工作气体的N-2浓度。在N-2浓度为50%时检测到(2 0 0)相的形成。沉积膜的摩擦学性能在很大程度上取决于总压力。对于在总压力9 Pa下以50%的N-2沉积的TiN膜,测得的低摩擦系数为0.14。(c)2004由Elsevier B.V.出版。

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