Hf_(1-x)Si_xO_y dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

摘要

Hf_(1-x)Si_xO_y is an attractive candidate material for high-k dielectrics. We report in this work the deposition of ultra-thin Hf_(1-x)Si_xO_y, films (0.1 ≤ x ≥ 0.6) on silicon substrate at 450 ℃ by UV-photo-induced chemical vapour deposition (UV-CVD) using 222 nm excimer lamps. Silicon(IV) and hafnium(IV) organic compounds were used as the precursors. Films from around 5 to 40 nm in thickness with refractive indices from 1.782 to 1.870 were grown. The deposition rate was found to be of 6 nm/min at a temperature of 450 ℃. The physical, interfacial and electrical properties of hafnium silicate (Hf_(1-x)Si_xO_y) thin films were investigated by using X-ray photoelectron spectroscopy, ellipsometry, FT-IR, C-V and I-V measurements. XRD showed that they were basically amorphous, while Fourier transform infrared spectroscopy (FT-IR), clearly revealed Hf-O-Si absorption in the photo-CVD deposited Hf_(1-x)Si_xO_y films. Surface and interfacial properties were analysed by TEM and XPS. It is found that carbon content in the films deposited by UV-CVD is very low and it also decreases with increasing Si/(Si + Hf) ratio, as low as about 1 at.% at the Si/(Si + Hf) ratio of 60 at.%.