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机译:通过循环沉积和退火方案沉积的Hf_(1-x)Zr_xO_2栅电介质的多技术x射线和晶体相,组织结构以及电子结构的光学表征
College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany,New York 12203, USA;
TEL Technology Center, America, LLC, 255 Fuller Rd., Albany, New York 12203, USA;
TEL Technology Center, America, LLC, 255 Fuller Rd., Albany, New York 12203, USA;
TEL Technology Center, America, LLC, 255 Fuller Rd., Albany, New York 12203, USA;
Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton,New York 13902, USA;
Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA;
Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA;
College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany,New York 12203, USA;
College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany,New York 12203, USA;
College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany,New York 12203, USA;
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA;
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA;
TEL Technology Center, America, LLC, 255 Fuller Rd., Albany, New York 12203, USA;
College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany,New York 12203, USA;
机译:通过循环沉积和退火方案沉积的Hf1-xZrxO2栅电介质的原子层的多技术X射线和晶体相,织构和电子结构的光学表征
机译:Ge和Si衬底在循环原子层沉积-退火Hf_(1-x)Zr_xO_2 / Al_2O_3薄膜叠层中高k四方相形成和界面性质中的作用
机译:金属氧化物半导体场效应晶体管应用原子层沉积制备的Hf_(1_x)Zr_xO_2栅电介质的特征值0≤x≤1
机译:用于测定原子层沉积HF_(1-X)Zr_XO_2的晶相和电子结构的多技术方法
机译:GaN上等离子增强原子层沉积介电层的界面电子状态表征。
机译:微波退火介电增强沉积原子层的Al2O3 / ZrO2 / Al2O3 MIM电容器
机译:退火对原子层沉积HfO2栅介质的多层MoS2晶体管电性能的影响
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。