MULTI-TECHNIQUE APPROACH FOR DETERMINATION OF CRYSTALLINE PHASE AND ELECTRONIC STRUCTURE OF ATOMIC LAYER DEPOSITED HF_(1-X)ZR_XO_2

摘要

The combination of XPS of the valence band and SE of the optical band edge can be used to identify crystallinity and the presence of monoclinic vs. tetragonal phase for Hf_(1-x)Zr_xO_2 high k materials. NEXAFS of the conduction band was used to unambiguously determine the electronic conduction band structure, crystalline phase, and the crystal phase transformation from monoclinic to non-monoclinic (mainly tetragonal) structure due to the addition of ZrO_2 in HfO_2. The combination of SE and XPS to determine crystalline phase may offer promise for an integrated in-line metrology and hybrid metrology approach for high-k dielectric development and monitoring.