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Investigation of Ti/TiN multilayered films in a reactive mid-frequency dual-magnetron sputtering

机译:反应中频双磁控溅射中Ti / TiN多层膜的研究

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摘要

Influence of the process parameters like (ⅰ) sputtering gas pressure, (ⅱ) target current, (ⅲ) substrate bias voltage and (ⅳ) substrate temperature of a reactive mid-frequency dual-magnetron sputtering on (a) surface defects and (b) mechanical properties of Ti/TiN multilayered films was investigated. The forming mechanisms of the observed droplets and craters were analyzed. Results showed when: (1) pressure of Ar/N_2 gases P_(Ar/N_2) was at 0.31 Pa and substrate temperature was in certain range, the size and the density of the surface defects on the TiN films tended to decrease with increasing the target current and the pulsed bias voltage; (2) the optimal deposition parameters for accomplishing fewer surface defects were used, increasing the thickness of the Ti buffer layer decreased the microhardness in certain level, and the adhesion was firstly increased and then decreased as thickness reaching and/or beyond a critical value. Results also showed that selection of optimized process parameters evidently minimized the surface defects and improved the mechanical properties of the film.
机译:反应性中频双磁控溅射的工艺参数(ⅰ)溅射气压,(ⅱ)目标电流,(ⅲ)衬底偏置电压和(ⅳ)衬底温度对(a)表面缺陷和(b)的影响)研究了Ti / TiN多层膜的机械性能。分析了观察到的液滴和火山口的形成机理。结果表明:(1)Ar / N_2气体P_(Ar / N_2)的压力为0.31 Pa,且衬底温度在一定范围内,TiN膜上表面缺陷的尺寸和密度趋于随着增加而减小。目标电流和脉冲偏置电压; (2)使用了用于实现较少表面缺陷的最佳沉积参数,增加Ti缓冲层的厚度在一定程度上降低了显微硬度,并且随着厚度达到和/或超过临界值,附着力首先增加然后减小。结果还表明,选择最佳的工艺参数明显减少了表面缺陷并改善了薄膜的机械性能。

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