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首页> 外文期刊>Surface & Coatings Technology >Investigation of surface defects and parameter optimization of chromium oxide films in a mid-frequency dual-magnetron sputtering
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Investigation of surface defects and parameter optimization of chromium oxide films in a mid-frequency dual-magnetron sputtering

机译:中频双磁控溅射氧化铬膜的表面缺陷及参数优化研究

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摘要

Aiming at identifying the mechanisms to cause macro-particles and caves on coating surface, and optimizing the process parameters, a series of chromium oxide films were deposited using a reactive mid-frequency dual-magnetron sputtering system. Orthogonal design and variance analysis were then used to optimize the process parameters and to reveal the influences of the target currents, the gas pressures, and the substrate bias voltages on the densities of the surface defects. Results show that: (i) the target current is the most influential factor to the defect density; (ii) the effects of the pressures and the substrate bias voltages tend to decrease recursively; and (iii) the buffer layer of Cr with thickness of ~200nm facilitates to optimize the Cr/Cr_xO_y multilayered films with superior combined properties, and the film can be coated with the setting conditions of target current at 16A, gas pressure at 0.31Pa, and bias voltages in a range of -120--240V.
机译:为了确定在涂层表面形成大颗粒和塌陷的机理,并优化工艺参数,使用反应性中频双磁控溅射系统沉积了一系列氧化铬膜。然后使用正交设计和方差分析来优化工艺参数,并揭示目标电流,气压和衬底偏置电压对表面缺陷密度的影响。结果表明:(i)目标电流是影响缺陷密度的最大因素; (ii)压力和衬底偏置电压的影响倾向于递归减小; (iii)厚度约200nm的Cr缓冲层有助于优化具有优异综合性能的Cr / Cr_xO_y多层膜,并且该膜可以涂覆目标电流为16A,气压为0.31Pa,偏置电压范围为-120--240V。

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