W-Ti DIFFUSION-PREVENTING FILM HAVING HIGH ETCHING RATE, AND W-Ti TARGET FOR SPUTTERING FOR FORMING THE SAME

摘要

PPROBLEM TO BE SOLVED: To provide a W-Ti diffusion preventing film for preventing the diffusion of Au and Al which is formed between an Au bump for mounting a semiconductor chip to a substrate and an Al electrode, and having high etching rate, and to provide a W-Ti target for sputtering for forming the W-Ti diffusion-preventing film having a high etching rate. PSOLUTION: The W-Ti diffusion-preventing film having a high etching rate has a composition comprising: Ti of 5 to 20% by mass; Fe of 25 to 100 ppm, and the balance comprising W and unavoidable impurities. The Ti-W target for sputtering has the same ingredient composition as that of the diffusion preventing film. PCOPYRIGHT: (C)2008,JPO&INPIT