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Structure and Properties of W-Ti thin films Deposited by Magnetron Sputtering

机译:磁控溅射沉积的W-Ti薄膜的结构与性能

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W-Ti thin films with different Ti contents were prepared by dc magnetron sputtering on silicon substrates of p-type (100) orientation, and the pure W and pure Ti thin films with the same thick were also prepared for comparison. The microstructure and properties of W-Ti thin film were characterized by XRD, SEM, AFM, microhardness tester and four-point probe method. The results show that the thin films exhibited a polycrystalline structure in the form of columnar grains, and only b.c.c. W phase could be registered in the films, and with the increase of Ti content, the solid solution of W-Ti was found. Compared to pure W film, the microhardness of W-Ti films decreased with the increasing of Ti content, while the sheet resistance rises with the increasing of Ti content. The microhardness of W-Ti thin films was higher than pure Ti thin films, and the sheet resistance was lower than pure Ti thin films.
机译:通过DC磁控溅射在p型(100)取向的硅基板上制备具有不同Ti含量的W-Ti薄膜,并且还制备具有相同厚的纯W和纯Ti薄膜进行比较。 W-Ti薄膜的微观结构和性质的特征在于XRD,SEM,AFM,微硬度测试仪和四点探针方法。结果表明,薄膜以柱状颗粒形式表现出多晶结构,仅为B.C. W相可以在薄膜中登记,并且随着Ti含量的增加,发现W-Ti的固溶体。与纯W薄膜相比,随着Ti含量的增加,W-Ti膜的显微硬度降低,而薄层电阻随着Ti含量的增加而上升。 W-Ti薄膜的显微硬度高于纯Ti薄膜,并且薄层电阻低于纯Ti薄膜。

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