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Interconnection Effects On The Performance Of Basic Subcircuits With Single-electron Tunneling Devices

机译:互连对单电子隧穿器件基本子电路性能的影响

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摘要

Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented.
机译:互连限制似乎是半导体工业发展的潜在问题,尤其是在纳米级。在这项工作中,借助简单的互连模型(其参数可以更改)研究基本电池的电性能。通过这项研究,我们的目标是确定互连对电路行为的影响并为其功能建立与互连相关的限制。还讨论了对更复杂的电路拓扑的推断。最后,介绍了使用新型互连技术(例如碳纳米管)的实现可能性。

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