Molecular beam epitaxy of semiconductor (BaSi_2)/metal (CoSi_2) hybrid structures on Si(111) substrates for photovoltaic application

摘要

We have succeeded in growing semiconductor (BaSi_2)/metal (CoSi_2) hybrid structures epitaxially on Si(111) by molecular beam epitaxy for the first time. When the thickness of CoSi_2 was approximately 55 nm, the interface between the CoSi_2 and BaSi_2 layers was found to be rough from transmission electron microscopy observation. The interface became sharp and the BaSi_2/CoSi_2 hybrid structures were epitaxially grown when the thickness of CoSi_2 was decreased down to approximately 27 nm, and the growth temperature was properly chosen.